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ASTM F1726-2002 standard guide for analysis of crystallographic perfection of silicon wafers

Standard Number:  ASTM F1726-2002
Title:  standard guide for analysis of crystallographic perfection of silicon wafers
Language:  English
Replacing Standard:  ASTM F80-94

Execute Date:  2002/12/10
Revocatory Date:  2003/5/10
Status:  Withdrawn
International Classification for Standards (ICS)ELECTRICAL ENGINEERING>>Semiconducting materials
Publisher:  American Society for Testing Material (ASTM)
Price:  
Number of Pages:3P.;A4  

Preface:   
Description:

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This guide covers the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage. Use of this practice is based upon the application of several referenced standards in a prescribed sequence to reveal and count microscopic defects or structures.

1.2 Materials for which this practice is applicable may be defined by the limitations of the referenced documents.

1.2.1 This practice is suitable for use with epitaxial or polished wafers grown in either (111) or (100) direction and doped either p or n-type with resistivity greater than 0.0005 937;-cm.

1.2.2 This practice is suitable for use with epitaxial wafers with layer thickness greater than 0.5 181m.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  
File Format:  PDF(Acrobat Reader) or Word version doc Document
File Size:  739KB
Tile in English:  standard guide for analysis of crystallographic perfection of silicon wafers

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